M39432 datasheet(7/28 Pages) STMICROELECTRONICS

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M39432

Automatic Stand-by

If CMOS levels (VCC±0.2V) are used to drive the

bus, and the bus is inactive for more than 150 ns,

the memory enters the Automatic Stand-by state.

The internal supply current is reduced to the

Stand-by Supply Current, ICC3.

Deep Power Down

The ICC consumption mode can be reduced to a

minimum using the Deep Power Down instruction

(as shown in Table 4). The device is set in a sleep

mode until the next Reset instruction is executed.

EEPROM Power Down

The M39432 can power-down the EEPROM block

using the specific instruction shown in Table 4.

Once in this state, the EEPROM block is no longer

accessible, until a Return instruction is executed.

READ

Read operations and instructions can be used:

– to read the contents of the memory array (Flash

memory block or EEPROM block)

– to read the memory array status and identifiers

(Flash memory block or EEPROM block).

Read Data (from Flash Memory or EEPROM)

For a Read operation, the Output Enable (G) and

one Chip Enable (EF or EE) must be driven low.

Read the Manufacturer Identifier

There are two alternative methods for reading the

Manufacturer Identifier: using a Read operation or

using a Read instruction.

Read Operation. The Manufacturer Identifier can

be read with a Read operation by applying VID (as

specified in Table 11) on A9, and the logic levels

specified in Table 5 applied to A0, A1, A6.

Read Instruction. The Manufacturer Identifier can

also be read using an instruction composed of four

operations: three specific Write operations (as

specified in Table 4) and a Read operation. This

either accesses the Manufacturer Identifier, the

Flash

Block

Identifier

the

Flash

Sector

Protection Status, depending on the levels that are

being applied to A0, A1, A6, A16, A17 and A18.

Read the Flash Block Identifier

Similarly, there are two alternative methods for

reading the Flash Block Identifier (E3h): using a

Read operation or using a Read instruction.

Please see the previous section, entitled “Read

the Manufacturer Identifier”, and Table 5 and

Table 4 for details.

Read the EEPROM Block Identifier

The EEPROM Block Identifier (64 bytes, user de-

fined) can be read with a single Read operation by

holding A6 low and A9 at VID (see Table 5).

Read the OTP Row

The OTP row is mapped in the EEPROM block.

With EE held low, and EF held high, an EEPROM

Read instruction is composed, as specified in

Table 6. Status Bits

Note: 1. X = Not a guaranteed value, can be read either as ‘1’ or ‘0’.

DQ7

DQ6

DQ5

DQ4

DQ3

DQ2

DQ1

DQ0

Flash

VIL

VIH

Data

Polling

Toggle

Flag

Error

Flag

Erase

Time-

Out

EEPROM

VIH

VIL

Data

Polling

Toggle

Flag

Figure 4. Data Polling Flowchart

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

FAIL

PASS

AI01369B

DQ7

DATA

YES

DQ5

= 1

DQ7

DATA

YES

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