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M39432

Note: 1. AAh @ 5555h means “Write the value AAh at the address 5555h”.

and Unprotection” on page 18).

3. Addresses of additional sectors to be erased must be entered within a time-out of 80

µs of each other.

Instruction

EE

EF

Cycle 1

Cycle 2

Cycle 3

Cycle 4

Cycle 5

Cycle 6

Cycle 7

Read

Manufacturer

10

AAh

@5555h

55h

@2AAAh

90h

@5555h

Read Identifier

with (A0,A1,A6)

set to (0,0,0)

Read Flash

10

AAh

@5555h

55h

@2AAAh

90h

@5555h

Read Identifier

with (A0,A1,A6)

set to (1,0,0)

Read OTP Row

0

1

AAh

@5555h

55h

@2AAAh

90h

@5555h

Read

Byte 1

Read

Byte 2

Read

Byte N

Read Sector

10

AAh

@5555h

55h

@2AAAh

90h

@5555h

Read Identifier

with (A0,A1,A6)

set to (0,1,0)

Program a Byte of

Flash Memory

10

AAh

@5555h

55h

@2AAAh

A0h

@5555h

Data

@ Address

Erase a Sector of

Flash Memory

10

AAh

@5555h

55h

@2AAAh

80h

@5555h

AAh

@5555h

55h

@2AAAh

30h

@ Sector

address

30h

@ Sector

Erase the Whole

of Flash Memory

10

AAh

@5555h

55h

@2AAAh

80h

@5555h

AAh

@5555h

55h

@2AAAh

10h

@5555h

Suspend Sector

Erase

10

B0h

@any

address

Resume Sector

Erase

10

30h

@any

address

EEPROM Power

Down

01

AAh

@5555h

55h

@2AAAh

30h

@5555h

Deep Power

Down

10

20h

@5555h

SDP Enable

(EEPROM)

01

AAh

@5555h

55h

@2AAAh

A0h

@5555h

Write

Byte 1

Write

Byte 2

Write

Byte N

SDP Disable

(EEPROM)

01

AAh

@5555h

55h

@2AAAh

80h

@5555h

AAh

@5555h

55h

@2AAAh

20h

@5555h

Write OTP Row

0

1

AAh

@5555h

55h

@2AAAh

B0h

@5555h

Write

Byte 1

Write

Byte 2

Write

Byte N

Return (from OTP

Read or

EEPROM Power

Down)

01

F0h

@any

address

Reset

1

0

AAh

@5555h

55h

@2AAAh

F0h

@any

address

Reset (short

instruction)

10

F0h

@any

address