M39432

2/28

blocks: 4 Mbit of Flash memory and 256 Kbit of

EEPROM. Each block operates independently

during a Write cycle: in concurrent mode, the

Flash Memory can be read while the EEPROM is

being written.

There is also a 64 byte row of OTP (one time

programmable) EPROM.

The M39432 EEPROM block may be written

bytewise or by a page at a time (up to 64 bytes).

The integrity of the data can be secured with the

help of the Software Data Protection (SDP).

The M39432 Flash Memory block offers 8 sectors,

each one 64 KByte in size. Each sector may be

erased individually, and programmed a byte at a

time. Each sector can be separately protected and

unprotected against Program and Erase. Sector

erasure may be suspended, while data is read

from other sectors of the Flash memory block (or

from the EEPROM block), and then resumed. The

Flash memory block is functionally compatible with

the M29W040 (4 Mbit Single Voltage Flash

Memory).

During a Program or Erase cycle in the Flash

memory or during a Write cycle in the EEPROM,

the status of the M39432 internal logic can be read

on the Data Output pins DQ7, DQ6, DQ5 and

DQ3.

SIGNAL DESCRIPTION

Address Inputs (A0-A18)

The address inputs for the memory array are

latched during a write operation. The EEPROM

block is selected by the EE input, and the Flash

memory block the EF input. A0-A14 access

locations in the EEPROM block; A0-A18 access

locations in the Flash memory block.

the A9 address input, additional device-specific

information can be accessed:

– Read the Manufacturer identifier

– Read the Flash block identifier

– Read/Write the EEPROM block identifier

– Verify the Flash Sector Protection Status.

Figure 2. TSOP Connections

Note: 1. NC = Not Connected.

A3

A0

DQ0

A7

NC

R/B

A4

NC

A13

EE

A11

NC

DQ7

A14

NC

VSS

G

DQ5

DQ1

DQ2

DQ3

DQ4

DQ6

A17

W

A16

A12

A18

VCC

A15

AI01947

M39432

10

1

11

20

21

30

31

40

NC

A9

A10

A8

EF

A6

A1

A5

A2

NC

Table 2. Absolute Maximum Ratings

Note: 1. Stresses above those listed may cause permanent damage to the device. These are stress ratings only and operation of the device

at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to

Absolute Maximum Rating conditions for extended periods may affect device reliability. Please see the STMicroelectronics SURE

Program and other relevant quality documents.

2. Minimum voltage may undershoot to –2 V, during transition and for less than 20 ns.

Symbol

Parameter

Value

Unit

Ambient Operating Temperature

–40 to 85

°C

1

Temperature Under Bias

–50 to 125

°C

1

Storage Temperature

–65 to 150

°C

1,2

Input or Output Voltage (except A9)

–0.6 to 7

V

1

Supply Voltage

–0.6 to 7

V

1,2

A9, G and EF Voltage

–0.6 to 13.5

V