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M39432

Note: 1. All other timings are defined in Table 13.

Table 18. Program, Erase Times and Program, Erase Endurance Cycles (Flash Block)

Symbol

Alt.

Parameter

M39432

Unit

-100

-120

-150

Min

Max

Min

Max

Min

Max

2

Write Enable High to DQ7 Valid

(Program, W controlled)

10

10

10

µs

2

Write Enable High to DQ7 Valid (Sector

Erase, W controlled)

1.5

30

1.5

30

1.5

30

s

2

Flash Block Enable High to DQ7 Valid

(Program, EF controlled)

10

10

10

µs

2

Flash Block Enable High to DQ7 Valid

(Sector Erase, EF controlled)

1.5

30

1.5

30

1.5

30

s

DQ7 Valid to Output Valid (Data

Polling)

40

50

55

ns

Write Enable High to Output Valid

(Program)

10

10

10

µs

Write Enable High to Output Valid

(Sector Erase)

1.5

30

1.5

30

1.5

30

s

Flash Block Enable High to Output

Valid (Program)

10

10

10

µs

Flash Block Enable High to Output

Valid (Sector Erase)

1.5

30

1.5

30

1.5

30

s

Parameter

M39432

Unit

Min.

Typ.

Max.

Chip Program (Byte)

8

s

Chip Erase (Pre-programmed)

3

30

s

Chip Erase

10

s

Sector Erase (Pre-programmed)

1

30

s

Sector Erase

2

s

Byte Program

10

µs

Program/Erase Cycles (per Sector)

100,000

cycles