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M39432 数据表(PDF) 1 Page - STMicroelectronics |
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M39432 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 28 page ![]() 1/28 November 1999 M39432 Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM s Multiple Memories on a Single Chip: – 4 Mbit Flash Memory (organised as 8 sectors) – 256 Kbit EEPROM – 64 Byte One Time Programmable Memory s CONCURRENT Mode (Read Flash while writing to EEPROM) s WRITE, PROGRAM and ERASE Status Bits s 2.7V to 3.6V Single Supply Voltage for PROGRAM, ERASE and READ Operations s 100 ns Access Time (Flash and EEPROM blocks) s Low Power Consumption –60 µA Stand-by mode (maximum) – Deep Power Down mode: 6 µA (maximum), 200 nA (typical) s Standard Flash Memory Package s 100,000 Erase/Write Cycles (minimum) s 10 Year Data Retention (minimum) DESCRIPTION The M39432 is a single supply voltage memory device combining Flash memory and EEPROM on a single chip. The memory is mapped in two Figure 1. Logic Diagram AI01946 19 A0-A18 EE DQ0-DQ7 VCC M39432 G EF VSS 8 W R/B Table 1. Signal Names A0-A18 Address Inputs DQ0-DQ7 Data Inputs / Outputs EE EEPROM Block Enable EF Flash Block Enable G Output Enable W Write Enable R/B Ready/Busy Output VCC Supply Voltage VSS Ground TSOP40 (NC) 10 x 20 mm |
类似零件编号 - M39432 |
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类似说明 - M39432 |
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