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RA4M2 数据表(PDF) 24 Page - Renesas Technology Corp |
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RA4M2 数据表(HTML) 24 Page - Renesas Technology Corp |
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24 / 93 page  2.2.3 I/O IOH, IOL Table 2.5 I/O IOH, IOL Parameter Symbol Min Typ Max Unit Permissible output current (average value per pin) Ports P000 to P008, P013 to P015, P201 — IOH — — –2.0 mA IOL — — 2.0 mA Ports P205, P206, P407 to P415, P708 (total 12 pins) Low drive*1 IOH — — –2.0 mA IOL — — 2.0 mA Middle drive*2 IOH — — –4.0 mA IOL — — 4.0 mA High drive*3 IOH — — –20 mA IOL — — 20 mA Other output pins*4 Low drive*1 IOH — — –2.0 mA IOL — — 2.0 mA Middle drive*2 IOH — — –4.0 mA IOL — — 4.0 mA High drive*3 IOH — — –16 mA IOL — — 16 mA Permissible output current (max value per pin) Ports P000 to P008, P013 to P015, P201 — IOH — — –4.0 mA IOL — — 4.0 mA Ports P205, P206, P407 to P415, P708 (total 12 pins) Low drive*1 IOH — — –4.0 mA IOL — — 4.0 mA Middle drive*2 IOH — — –8.0 mA IOL — — 8.0 mA High drive*3 IOH — — –40 mA IOL — — 40 mA Other output pins*4 Low drive*1 IOH — — –4.0 mA IOL — — 4.0 mA Middle drive*2 IOH — — –8.0 mA IOL — — 8.0 mA High drive*3 IOH — — –32 mA IOL — — 32 mA Permissible output current (maxvalue of total of all pins) Maximum of all output pins ΣIOH (max) — — –80 mA ΣIOL (max) — — 80 mA Note 1. This is the value when low driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving ability is retained in Deep Software Standby mode. Note 2. This is the value when middle driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving ability is retained in Deep Software Standby mode. Note 3. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving ability is retained in Deep Software Standby mode. Note 4. Except for P200, which is an input port. Caution: To protect the reliability of the MCU, the output current values should not exceed the values in this table. The average output current indicates the average value of current measured during 100 µs. RA4M2 Datasheet 2. Electrical Characteristics R01DS0367EJ0140 Rev.1.40 May 9, 2025 Page 24 of 93 |
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