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RZ/T2ME 数据表(PDF) 49 Page - Renesas Technology Corp

部件名 RZ/T2ME
功能描述  RZ Arm-based High-end 32 & 64-bit MPUs
PDF  116 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RZ/T2ME 数据表(HTML) 49 Page - Renesas Technology Corp

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Table 2.21
Bus timing (2 of 2)
Conditions: VOH = VCC33 × 0.5, VOL = VCC33 × 0.5, C = 15 pF (CKIO), 30 pF (others), Tjmin = −40°C
Parameter
Symbol
CKIO = 1/tCKcyc*1
(Max 66 MHz)
Unit
Reference Figure
Min.
Max.
DQM delay time 1
tDQMD1
2
11
ns
Figure 2.19 to Figure 2.32
CKE delay time 1
tCKED1
2
11
ns
Figure 2.34
AH# delay time
tAHD
1/2tCKcyc
1/2tCKcyc + 10 ns
Figure 2.15
Multiplex address delay time
tMAD
—
10
ns
Figure 2.15
Multiplex address hold time
tMAH
1
—
ns
Figure 2.15
Address setup time to AH#
tAVVH
1/2tCKcyc − 2
—
ns
Figure 2.15
DACK/TEND delay time
tDACD
See section 2.5.4. DMAC
Timing
ns
Figure 2.11 to Figure 2.32
Note:
Notation of 1/2tCKcyc in the delay time, setup time, and hold time shows 1/2 cycles from the clock rising edge, that is, the reference
of clock falling.
Note 1. Take the number of cycles of waiting that suits the system configuration into consideration with regard to the fmax value for CKIO
(the external bus clock). When CKIO is running at 50 MHz or a higher frequency, select high drive output.
Note 2. These are values when SDRAM (CSnBCR.TYPE[2:0] = 100b) is selected in the CSn space bus control register (CSnBCR) and
high-drive output is selected for CKIO.
Note 3. These are values when high-drive output and normal output are respectively selected for CKIO.
Table 2.22
Bus timing (1 of 2)
Conditions: VOH = VCC33 × 0.5, VOL = VCC33 × 0.5, C = 12 pF (CKIO), 12 pF (others), Tjmin = −20°C
Parameter
Symbol
CKIO = 1/tCKcyc*1
(Max 100 MHz)
Unit
Reference Figure
Min.
Max.
Address delay time 1
SDRAM*2
tAD1
1.3
8
ns
Figure 2.11 to Figure 2.35
Other than the above
0
8
ns
Address delay time 2
tAD2
1/2tCKcyc - 0.5 1/2tCKcyc + 8
ns
Figure 2.18
Address setup time
tAS
0
—
ns
Figure 2.11 to Figure 2.14,
Figure 2.18
Chip enable setup time
tCS
0
—
ns
Figure 2.11 to Figure 2.14,
Figure 2.18
Address hold time
tAH
0
—
ns
Figure 2.11 to Figure 2.14
BS delay time
tBSD
—
8
ns
Figure 2.11 to Figure 2.32
CSn# delay time 1
SDRAM*2
tCSD1
1.3
8
ns
Figure 2.11 to Figure 2.35
Other than the above
0
8
ns
Read/write delay time 1
SDRAM*2
tRWD1
1.3
8
ns
Figure 2.11 to Figure 2.35
Other than the above
0
8
ns
Read strobe delay time
tRSD
1/2tCKcyc
1/2tCKcyc + 8
ns
Figure 2.11 to Figure 2.18
Read data setup time 1*3
High-drive output
tRDS1
1/2tCKcyc + 4.5 —
ns
Figure 2.11 to Figure 2.17
Normal output
1/2tCKcyc + 7
—
ns
Read data setup time 2*3
High-drive output
tRDS2
3.5
—
ns
Figure 2.19 to Figure 2.22,
Figure 2.27 to Figure 2.29
Read data setup time 3*3
High-drive output
tRDS3
1/2tCKcyc + 4.5 —
ns
Figure 2.18
Normal output
1/2tCKcyc + 7
—
ns
Read data hold time 1
tRDH1
0
—
ns
Figure 2.11 to Figure 2.17
RZ/T2ME Datasheet
2. Electrical Characteristics
R01DS0441EJ0110 Rev.1.10
Mar 13, 2026
Page 49 of 116



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