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RZ/T2ME 数据表(PDF) 71 Page - Renesas Technology Corp |
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RZ/T2ME 数据表(HTML) 71 Page - Renesas Technology Corp |
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71 / 116 page ![]() CKIO tDACD tDACD Tnop Tc4 A25 to A0 tAD1 tCSD1 tRWD1 A12/A11*1 RD/WR# tCSD1 DACK*2 Tc1 Tc2 tRWD1 D31 to D0 tBSD BS# tBSD Column address tAD1 tAD1 tAD1 WRIT command CS3#, CS2# RAS# tCASD1 CAS# tCASD1 DQMUU, DQMUL, DQMLU, DQMLL tDQMD1 tDQMD1 (High) CKE Tc3 tAD1 tAD1 tAD1 tAD1 tWDH2 tWDD2 tRWD1 tWDH2 tWDD2 Note 1. Address pin to be connected to A10 of SDRAM. Note 2. DACK is waveform when active-low is specified. Figure 2.31 Synchronous DRAM burst-write bus cycle (write for 4 cycles) (bank active mode: WRITE command, same row address, WTRCD = 0 cycles, TRWL = 0 cycles) RZ/T2ME Datasheet 2. Electrical Characteristics R01DS0441EJ0110 Rev.1.10 Mar 13, 2026 Page 71 of 116 |
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