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RZ/T2ME 数据表(PDF) 64 Page - Renesas Technology Corp |
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RZ/T2ME 数据表(HTML) 64 Page - Renesas Technology Corp |
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64 / 116 page ![]() CKIO tDACD tDACD Tr A25 to A0 tAD1 tAD1 tCSD1 tRWD1 A12/A11*1 RD/WR# tCSD1 DACK*2 Tc1 Trwl D31 to D0 tBSD BS# tBSD Row address Column address tAD1 tAD1 tAD1 tAD1 WRITA command CS3#, CS2# RAS# tRASD1 tRASD1 tCASD1 CAS# tCASD1 DQMUU, DQMUL, DQMLU, DQMLL tDQMD1 tDQMD1 tWDH2 tWDD2 (High) CKE tRWD1 tRWD1 Trw Trw Note 1. Address pin to be connected to A10 of SDRAM. Note 2. DACK is waveform when active-low is specified. Figure 2.24 Synchronous DRAM single-write bus cycle (with auto precharge, WTRCD = 2 cycles, TRWL = 1 cycle) RZ/T2ME Datasheet 2. Electrical Characteristics R01DS0441EJ0110 Rev.1.10 Mar 13, 2026 Page 64 of 116 |
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