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数据搜索系统，热门电子元器件搜索 |
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RZ/T2ME 数据表(PDF) 106 Page - Renesas Technology Corp |
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RZ/T2ME 数据表(HTML) 106 Page - Renesas Technology Corp |
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106 / 116 page  50 pF Observation point 50 pF USB_DP USB_DM Figure 2.92 Measurement circuit (full speed) Table 2.43 On-chip USB high-speed characteristics Parameter Symbol Min. Typ. Max. Unit Reference figure Rising time tHSR — — 2.133 V/µs Figure 2.93, Figure 2.94 Falling time tHSF — — 2.133 V/µs Output resistors (also used as high-speed terminating resistor) ZHSDRV 40.5 — 49.5 Ω — Note: The output resistors (ZHSDRV) for connection to the USB_DP and USB_DM pins are within the LSI. USB_DP, USB_DM 10% 90% 90% 10% tHSR tHSF Figure 2.93 USB_DP, USB_DM output timing (high speed) 45 kΩ Observation point 45 kΩ USB_DP USB_DM Figure 2.94 Measurement circuit (high speed) RZ/T2ME Datasheet 2. Electrical Characteristics R01DS0441EJ0110 Rev.1.10 Mar 13, 2026 Page 106 of 116 |
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