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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST7263B 数据表(PDF) 108 Page - STMicroelectronics |
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ST7263B 数据表(HTML) 108 Page - STMicroelectronics |
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108 / 132 page  ST7263B 108/132 EMC CHARACTERISTICS (Cont’d) True Open Drain Pin Protection The centralized protection (4) is not involved in the discharge of the ESD stresses applied to true open drain pads due to the fact that a P-Buffer and diode to VDD are not implemented. An additional local protection between the pad and VSS (5a & 5b) is implemented to completely absorb the posi- tive ESD discharge. Multisupply Configuration When several types of ground (VSS, VSSA, ...) and power supply (VDD, VDDA, ...) are available for any reason (better noise immunity...), the structure shown in Figure 60 is implemented to protect the device against ESD. Figure 58. Positive Stress on a True Open Drain Pad vs. VSS Figure 59. Negative Stress on a True Open Drain Pad vs. VDD Figure 60. Multisupply Configuration IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path Path to avoid (5a) (5b) IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path (3b) (3b) VDDA VSSA VDDA VDD VSS BACK TO BACK DIODE BETWEEN GROUNDS VSSA |
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