MMBZXVAL_SER_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 1 September 2008

4 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

5.

Limiting values

[1]

In accordance with IEC 61643-321 (10/1000

µs current waveform).

[2]

Measured from pin 1 or 2 to pin 3.

[3]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[4]

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1 or 2 to pin 3.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

rated peak pulse power

[1][2] -40

W

rated peak pulse current

[1][2]

MMBZ12VAL

MMBZ12VAL/DG

-

2.35

A

MMBZ15VAL

MMBZ15VAL/DG

-

1.9

A

MMBZ18VAL

MMBZ18VAL/DG

-

1.6

A

MMBZ20VAL

MMBZ20VAL/DG

-

1.4

A

MMBZ27VAL

MMBZ27VAL/DG

-1

A

MMBZ33VAL

MMBZ33VAL/DG

-

0.87

A

Per device

total power dissipation

[3] -

265

mW

[4] -

360

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 7.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

[1][2]

IEC 61000-4-2

(contact discharge)

-30

kV

machine model

-

2

kV