MMBZXVAL datasheet(5/15 Pages) NXP

5 / 15 page

MMBZXVAL_SER_1

Product data sheet

Rev. 01 — 1 September 2008

5 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3]

Measured from pin 1 or 2 to pin 3.

Table 8.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 8 kV

Fig 1.

10/1000

µs pulse waveform according to

IEC 61643-321

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

tp (ms)

4.0

3.0

1.0

2.0

006aab319

100

150

IPP

(%)

50 % IPP; 1000 µs

100 % IPP; 10 µs

001aaa631

IPP

100 %

90 %

30 ns

60 ns

10 %

tr = 0.7 ns to 1 ns

Table 9.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

460

K/W

[2] -

340

K/W

Rth(j-sp)

thermal resistance from junction

to solder point

[3] --50

K/W

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