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MMBZXVAL 数据表(PDF) 1 Page - NXP Semiconductors |
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MMBZXVAL 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 15 page ![]() 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. [1] All types available as /DG halogen-free version. 1.2 Features 1.3 Applications MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Rev. 01 — 1 September 2008 Product data sheet Table 1. Product overview Type number[1] Package Configuration NXP JEDEC MMBZ12VAL SOT23 TO-236AB dual common anode MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL I Unidirectional ESD protection of two lines I ESD protection up to 30 kV (contact discharge) I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD) I Low diode capacitance: Cd ≤ 140 pF I IEC 61643-321 I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualified I Ultra low leakage current: IRM ≤ 5nA I Computers and peripherals I Automotive electronic control units I Audio and video equipment I Portable electronics I Cellular handsets and accessories |
类似零件编号 - MMBZXVAL |
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类似说明 - MMBZXVAL |
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