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MMBZXVAL 数据表(PDF) 6 Page - NXP Semiconductors

部件名 MMBZXVAL
功能描述  Double ESD protection diodes for transient overvoltage suppression
PDF  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

MMBZXVAL 数据表(HTML) 6 Page - NXP Semiconductors

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MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
6 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
7.
Characteristics
Table 10.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 10 mA
-
-
0.9
V
VRWM
reverse standoff
voltage
MMBZ12VAL
MMBZ12VAL/DG
-
-
8.5
V
MMBZ15VAL
MMBZ15VAL/DG
--12
V
MMBZ18VAL
MMBZ18VAL/DG
-
-
14.5
V
MMBZ20VAL
MMBZ20VAL/DG
--17
V
MMBZ27VAL
MMBZ27VAL/DG
--22
V
MMBZ33VAL
MMBZ33VAL/DG
--26
V
IRM
reverse leakage current
MMBZ12VAL
MMBZ12VAL/DG
VRWM = 8.5 V
-
0.1
5
nA
MMBZ15VAL
MMBZ15VAL/DG
VRWM =12V
-
0.1
5
nA
MMBZ18VAL
MMBZ18VAL/DG
VRWM = 14.5 V
-
0.1
5
nA
MMBZ20VAL
MMBZ20VAL/DG
VRWM =17V
-
0.1
5
nA
MMBZ27VAL
MMBZ27VAL/DG
VRWM =22V
-
0.1
5
nA
MMBZ33VAL
MMBZ33VAL/DG
VRWM =26V
-
0.1
5
nA
VBR
breakdown voltage
IR =1mA
MMBZ12VAL
MMBZ12VAL/DG
11.4
12
12.6
V
MMBZ15VAL
MMBZ15VAL/DG
14.25
15
15.75
V
MMBZ18VAL
MMBZ18VAL/DG
17.1
18
18.9
V
MMBZ20VAL
MMBZ20VAL/DG
19
20
21
V
MMBZ27VAL
MMBZ27VAL/DG
25.65
27
28.35
V
MMBZ33VAL
MMBZ33VAL/DG
31.35
33
34.65
V



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