MMBZXVAL_SER_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 1 September 2008

8 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

MMBZ27VAL: unidirectional and bidirectional

Fig 3.

Rated peak pulse power as a function of

exponential pulse duration (rectangular

waveform); typical values

Fig 4.

Relative variation of rated peak pulse power as

a function of junction temperature; typical

values

(1) MMBZ15VAL: unidirectional

(2) MMBZ15VAL: bidirectional

(3) MMBZ27VAL: unidirectional

(4) MMBZ27VAL: bidirectional

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Reverse leakage current as a function of

ambient temperature; typical values

006aab320

10

(W)

1

10

1

0

200

150

50

100

006aab321

0.4

0.8

1.2

0

025

20

10

15

5

006aab322

40

60

20

80

100

(pF)

0

(1)

(2)

(3)

(4)

006aab323

10

1

(nA)

−75

175

125

25

75

−25