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MMBZXVAL 数据表(PDF) 7 Page - NXP Semiconductors

部件名 MMBZXVAL
功能描述  Double ESD protection diodes for transient overvoltage suppression
PDF  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

MMBZXVAL 数据表(HTML) 7 Page - NXP Semiconductors

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MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
7 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
[1]
In accordance with IEC 61643-321(10/1000
µs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
Cd
diode capacitance
f = 1 MHz; VR =0V
MMBZ12VAL
MMBZ12VAL/DG
-
110
140
pF
MMBZ15VAL
MMBZ15VAL/DG
-
85
105
pF
MMBZ18VAL
MMBZ18VAL/DG
-
7090pF
MMBZ20VAL
MMBZ20VAL/DG
-
6580pF
MMBZ27VAL
MMBZ27VAL/DG
-
4860pF
MMBZ33VAL
MMBZ33VAL/DG
-
4555pF
VCL
clamping voltage
[1][2]
MMBZ12VAL
MMBZ12VAL/DG
IPPM = 2.35 A
-
-
17
V
MMBZ15VAL
MMBZ15VAL/DG
IPPM = 1.9 A
-
-
21
V
MMBZ18VAL
MMBZ18VAL/DG
IPPM = 1.6 A
-
-
25
V
MMBZ20VAL
MMBZ20VAL/DG
IPPM = 1.4 A
-
-
28
V
MMBZ27VAL
MMBZ27VAL/DG
IPPM = 1 A
--40
V
MMBZ33VAL
MMBZ33VAL/DG
IPPM = 0.87 A
-
-
46
V
SZ
temperature coefficient
IZ =1mA
MMBZ12VAL
MMBZ12VAL/DG
-
8.2
-
mV/K
MMBZ15VAL
MMBZ15VAL/DG
-
11
-
mV/K
MMBZ18VAL
MMBZ18VAL/DG
-
14
-
mV/K
MMBZ20VAL
MMBZ20VAL/DG
-
15.8
-
mV/K
MMBZ27VAL
MMBZ27VAL/DG
-
23
-
mV/K
MMBZ33VAL
MMBZ33VAL/DG
-
29.8
-
mV/K
Table 10.
Characteristics …continued
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit



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