MMBZXVAL_SER_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 1 September 2008

9 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

8.

Application information

The MMBZxVAL series is designed for the protection of up to two unidirectional data or

signal lines from the damage caused by ESD and surge pulses. The devices may be used

on lines where the signal polarities are either positive or negative with respect to ground.

The devices provide a surge capability of 40 W per line for a 10/1000

µs waveform.

Fig 7.

V-I characteristics for a unidirectional

ESD protection diode

Fig 8.

V-I characteristics for a bidirectional

ESD protection diode

006aab324

V

I

P-N

−

+

006aab325

−

+

Fig 9.

Typical application: ESD and transient voltage protection of data lines

006aab326

MMBZxVAL

line 1 to be protected

unidirectional protection

of two lines

bidirectional protection

of one line

line 2 to be protected

GND

MMBZxVAL

line 1 to be protected

GND