AT52SC1283J datasheet(1/52 Pages) ATMEL

部件名	AT52SC1283J

功能描述	128-Mbit Flash 32-Mbit/64-Mbit

PDF	52 Pages

Scroll/Zoom	100%

制造商	ATMEL [ATMEL Corporation]

网页	http://www.atmel.com

标志

1 / 52 page

Module Features

• 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM

• Single 88-ball (8 mm x 10 mm x 1.2 mm) CBGA Package

• 1.7V to 1.95V V

CC

• 1.8V to 1.95V for V

CCQ and PVCC

128-Mbit Flash Features

• 8M x 16 Organization

• High Performance

– Random Access Time – 70 ns, 85 ns

– Page Mode Read Time – 20 ns

– Synchronous Burst Frequency – 66 MHz

– Configurable Burst Operation

• Sector Erase Architecture

– Sixteen 4K Word Sectors with Individual Write Lockout

– Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout

• Typical Sector Erase Time: 32K Word Sectors – 800 ms; 4K Word Sectors – 200 ms

• Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one

Planes not Being Programmed/Erased

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming Data from Any Sector by Suspending Erase

of a Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

• Low-power Operation

–30 mA Active

– 20 µA Standby

• VPP Pin for Write Protection and Accelerated Program Operations

• RESET Input for Device Initialization

• Two Protection Registers (128 Bits + 2,048 Bits)

• Common Flash Interface (CFI)

• Top and Bottom Boot Sectors

• 1.7V to 1.95V Operating Voltage

Asynchronous/Page PSRAM Features

• 32-Mbit (2M Word x 16)/64-Mbit (4M Word x 16)

• 70 ns Random Access Time

• 30 ns Page Read Cycle Time

• 1.8V to 1.95V Operating Voltage

• <10 µA Deep Standby Power

Stack Module Memory Contents

Device

Memory Combination

AT52SC1283J

128M Flash + 32M PSRAM

AT52SC1284J

128M Flash + 64M PSRAM

128-Mbit Flash

+ 32-Mbit/64-Mbit

PSRAM

Stack Memory

AT52SC1283J

AT52SC1284J

Preliminary

3530B–STKD–2/4/05

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