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LTC4261IGN 数据表(PDF) 14 Page - Linear Technology |
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LTC4261IGN 数据表(HTML) 14 Page - Linear Technology |
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14 / 32 page ![]() LTC4261/LTC4261-2 14 42612fb If any of the above conditions is violated before the start-up delay expires, CTMR is quickly discharged and the turn-on sequence is restarted. After all the conditions are validated throughout the start-up delay, the ON pin is then checked. If it is high, the FET will be turned on. Otherwise, the FET will be turned on when the ON pin is raised high or the FET ON bit D3 in the CONTROL register is set to “1” through the I2C interface. The FET turn-on sequence follows by charging an external capacitor at the SS pin (CSS) with a 10µA pull-up current and the voltage at SS (VSS) is converted to a current (IGATE(UP)) of 11.5µA· VSS/2.56V for GATE pull-up. When the GATE reaches the FET threshold voltage, the inrush current starts to flow through the FET and a current (IRAMP) of 20µA· VSS/2.56V flows out of the RAMP pin and through an external capacitor (CR) connected between RAMP and VOUT. The SS voltage is clamped to 2.56V, which corresponds to IGATE(UP) = 11.5µA and IRAMP = 20µA. The RAMP pin voltage is regulated at 1.1V and the ramp rate of VOUT determines the inrush current: IµA C C INRUSH L R = 20 • The ramp rate of VSS determines dI/dt of the inrush current: dI dt µA C C µF ms C INRUSH L RSS = 20 1 256 •• • If CSS is absent, an internal circuit pulls the SS pin from 0V to 2.56V in about 220µs. When VOUT is ramped down to VEE, IGATE returns to the GATE pin and pulls the GATE up to VGATEH. Figure 3 illustrates the start-up sequence of the LTC4261/ LTC4261-2. During board insertion and input power step, an internal clamp turns on to hold the RAMP pin low. Capacitor CF and resistor RF suppress the noise at the RAMP pin. For proper operation, RF • CR should not exceed 50µs. The recommended value of CF is 3 • CR. Power Good Monitors When VDS of the pass transistor falls below 1.77V and GATE pulls above VZ – 1.2V, an internal power good signal is latched and a series of three delay cycles are started as shown in Figure 3. When the first delay cycle with a duration of 2tD expires, the PG pin pulls low as a power good signal to turn on the first module. When the second delay cycle (2tD) expires, the PGIO pin pulls low as a power good signal to turn on the second module. The third delay cycle with a duration of 4tD is for PGI check. Before the third delay cycle expires, the PGI pin must be pulled low by an external supply monitor (such as the LTC2900 in Figure 2) to keep the FET on. Otherwise, the FET is turned off and the power bad fault (PBAD) is logged in the FAULT register. The 2tD timer delay is obtained by charging CTMR with a 5µA current and discharging CTMR with a 12mA current when TMR reaches 2.56V. For the 4tD timer delay, the charging and discharging currents of CTMR are both 5µA. The power good signals at PG and PGIO are reset in all FET turn-off conditions except the overvoltage fault. Turn-Off Sequence and Auto-Retry In any of the following conditions, the FET is turned off by pulling down GATE with a 110mA current, and CSS and CTMR are discharged with 12mA currents. 1. The ON pin is low or the ON bit in the CONTROL reg- ister is set to 0. 2. The EN pin is high. 3. The voltage at UVL is lower than 2.291V and the volt- age at UVH is lower than 2.56V (undervoltage fault). 4. The voltage at OV is higher than 1.77V (overvoltage fault). 5. The voltage at VIN is lower than 9V (VIN undervoltage lockout). APPLICATIONS INFORMATION |
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