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STM32F107VC 数据表(PDF) 48 Page - STMicroelectronics |
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STM32F107VC 数据表(HTML) 48 Page - STMicroelectronics |
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48 / 95 page ![]() Electrical characteristics STM32F105xx, STM32F107xx 48/95 Doc ID 15274 Rev 4 5.3.7 Internal clock source characteristics The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: G Stop or Standby mode: the clock source is the RC oscillator G Sleep mode: the clock source is the clock that was set before entering Sleep mode. Table 24. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 1(3) 3. Guaranteed by design, not tested in production. % Factory- calibrated(4) 4. Based on characterization, not tested in production. TA = –40 to 105 °C –2 2.5 % TA = –10 to 85 °C –1.5 2.2 % TA = 0 to 70 °C –1.3 2 % TA = 25 °C –1.1 1.8 % tsu(HSI) (4) HSI oscillator startup time 12 µs IDD(HSI) (4) HSI oscillator power consumption 80 100 µA Table 25. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI (2) 2. Based on characterization, not tested in production. Frequency 30 40 60 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time 85 µs IDD(LSI) (3) LSI oscillator power consumption 0.65 1.2 µA |
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