| 数据搜索系统,热门电子元器件搜索 |
|
STM32F107VC 数据表(PDF) 50 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F107VC 数据表(HTML) 50 Page - STMicroelectronics |
|
50 / 95 page ![]() Electrical characteristics STM32F105xx, STM32F107xx 50/95 Doc ID 15274 Rev 4 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 30. Flash memory endurance and data retention 5.3.10 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Table 29. Flash memory characteristics Symbol Parameter Conditions Min(1) Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA"?"–40 to +105 °C 40 52.5 70 µs tERASE Page (1 KB) erase time TA ?"–40 to +105 °C 20 40 ms tME Mass erase time TA ?"–40 to +105 °C 20 40 ms IDD Supply current Read mode fHCLK = 72 MHz with 2 wait states, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 72 MHz, VDD = 3.3 V 5mA Power-down mode / Halt, VDD = 3.0 to 3.6 V 50 µA Vprog Programming voltage 2 3.6 V Symbol Parameter Conditions Value Unit Min(1) 1. Based on characterization, not tested in production. Typ Max NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |