AT25DF161 datasheet(13/60 Pages) ATMEL

13 / 60 page

3687C–DFLASH–7/09

AT25DF161 [Preliminary]

Figure 8-1.

Byte Program

Figure 8-2.

Page Program

8.2

Dual-Input Byte/Page Program

The Dual-Input Byte/Page Program command is similar to the standard Byte/Page Program

command and can be used to program anywhere from a single byte of data up to 256 bytes of

data into previously erased memory locations. Unlike the standard Byte/Page Program com-

mand, however, the Dual-Input Byte/Page Program command allows two bits of data to be

clocked into the device on every clock cycle rather than just one.

Before the Dual-Input Byte/Page Program command can be started, the Write Enable command

must have been previously issued to the device (see “Write Enable” on page 21) to set the Write

Enable Latch (WEL) bit of the Status Register to a logical “1” state. To perform a Dual-Input

Byte/Page Program command, an opcode of A2h must be clocked into the device followed by

the three address bytes denoting the first byte location of the memory array to begin program-

ming at. After the address bytes have been clocked in, data can then be clocked into the device

two bits at a time on both the SOI and SI pins.

The data is always input with the MSB of a byte first, and the MSB is always input on the SOI

pin. During the first clock cycle, bit 7 of the first data byte would be input on the SOI pin while bit

6 of the same data byte would be input on the SI pin. During the next clock cycle, bits 5 and 4 of

the first data byte would be input on the SOI and SI pins, respectively. The sequence would con-

tinue with each byte of data being input after every four clock cycles. Like the standard

Byte/Page Program command, all data clocked into the device is stored in an internal buffer.

If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page

boundary (A7-A0 are not all 0), then special circumstances regarding which memory locations to

SCK

MSB

00000010

410 11

812

37 38

31 32

29 30

OPCODE

HIGH-IMPEDANCE

AAAA

AAA

MSB

DDDDDDD

ADDRESS BITS A23-A0

DATA IN

SCK

MSB

00000010

839

37 38

31 32

29 30

OPCODE

HIGH-IMPEDANCE

AAA

MSB

DDDDDDD

ADDRESS BITS A23-A0

DATA IN BYTE 1

MSB

DDDDDDD

DATA IN BYTE n

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