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AS5130ASST 数据表(PDF) 7 Page - ams AG |
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AS5130ASST 数据表(HTML) 7 Page - ams AG |
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7 / 40 page  www.austriamicrosystems.com Revision 1.09 7 - 40 AS5130 Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s TPwrUp Power up time Startup from zero 2000 us Startup with preset AGC (Supplied during toff phase of AVDD from the external buffer capacitor via DVDD pin) 250 Startup from sleep power mode 150 Vout_wake up Wake up output Open drain output with tri-state behavior, see Fig 10 5V WakeLSB Angle difference threshold for wake up generation Factory setting is 4 LSB, value is accessible by SSI in buffered register and can be changed by customer. 0127 LSB DC/AC Characteristics for Digital Inputs and Outputs CMOS Input VIH High level Input voltage 0.7 x VDD V VIL Low level Input Voltage 0.3 x VDD V ILEAK Input Leakage Current 1µA CMOS Output VOH High level Output voltage VDD - 0.5 V VOL Low level Output Voltage VSS + 0.4 V CL Capacitive Load 35 pF tslew Slew Rate External capacitive load C_L = 35pF External series resistance R = 0 Ω Junction temperature TJ = 136ºC Rise time of the internal driver t_rise = 3ns Fall time of the internal driver t_fall = 3ns 30 ns tdelay Time Rise Fall 15 ns Programming Parameters VPROG Programming Voltage static voltage at pin PROG 8.0 8.5 V IPROG Programming Current 100 mA TambPROG Programming ambient temperature during programming 0 85 ºC tPROG Programming time timing is internally generated 2 4 µs VR,prog Analog readback voltage during Analog Readback mode at pin PROG 0.5 V VR,unprog 2.2 3.5 8-bit PWM output NPWM PWM resolution 8bit PWMIN PWM pulse width angle = 0º (00H) 0.59 0.556 0.526 µs PWMAX PWM pulse width angle = 358.6º (FFH) 150.9 142.3 134.61 µs PWP PWM period over full temperature range 151.5 142.8 135 µs fPWM PWM frequency =1 / PWM period 5.44 7 9.18 kHz Table 3. Electrical Characteristics (Continued) Symbol Parameter Conditions Min Typ Max Units |
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