AS5130ASST datasheet(6/40 Pages) AMSCO

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AS5130

Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s

6 Electrical Characteristics

TAMB = -40 to +125ºC, unless otherwise noted.

Table 3. Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

AVDD

Positive Supply Voltage

Except OTP programming

4.5

5.5

DVDD

Polling Mode Supply Voltage

3.6

5.5

IDD

Power Supply Current

Ioff

Power Down Mode

1.4

Resolution

8bit

1.406

TPwrUp

Power Up Time

Startup from zero

2000

µs

Startup with preset AGC

(Supplied during toff phase of AVDD

from the external buffer capacitor via

DVDD pin)

250

Startup from sleep power mode

150

tda

Propagation Delay

Analog signal path; over full

temperature range

µs

tdd

Tracking rate

Step rate of tracking ADC;

1 step = 1.406º

0.85

1.15

1.45

µs

tdelay

Signal Processing Delay

Total signal processing delay,

Analog + Digital + SSI readout

(tda + tdd + tSSI)

21.55

µs

Analog filter time constant

Internal lowpass filter

4.1

6.6

12.5

µs

INLcm

Accuracy

Centered Magnet

-2

Within horizontal displacement

radius (see parameters for magnet)

-3

Transition Noise

rms (1 sigma)

0.235

PORr

Power-On-Reset levels

VDD rising

3.7

4,3

PORf

VDD falling

3.4

3.7

3.9

Hyst

Hysteresis | PORr - PORf |

500

Parameters for Magnet

Rotational Speed

Frequencies above 1000 rpm

causes an additional not specified

DNL Error

-30000

30000

rpm

Resolution

8bit

Magnet diameter

Diametrically magnetized

Magnet thickness

2.5

Magnetic input range

Valid for use of full range of

sensitivity

Magnetic Sensitivity of AGC

AGC value available at SSI

0.5

LSB/

BDC

Magnetic Offset

Magnetic stray field without gradient

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