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M48T201Y 数据表(PDF) 29 Page - STMicroelectronics

部件名 M48T201Y
功能描述  5.0 or 3.3 V TIMEKEEPER® supervisor
PDF  37 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48T201Y 数据表(HTML) 29 Page - STMicroelectronics

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M48T201Y, M48T201V
DC and AC parameters
29/37
Table 13.
DC characteristics
Sym
Parameter
Test condition(1)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
M48T201Y
M48T201V
Unit
–70
–85
Min
Typ
Max
Min
Typ
Max
ILI
(2)
2.
RSTIN1 and RSTIN2 internally pulled-up to VCC through 100 KΩ resistor. WDI internally pulled-down to VSS through
100 K
Ω resistor.
Input leakage current
0V
≤ VIN ≤ VCC
±1
±1
µA
ILO
(3)
3.
Outputs deselected.
Output leakage
current
0V
≤ VOUT ≤ VCC
±1
±1
µA
ICC
Supply current
Outputs open
8
15
4
10
mA
ICC1
Supply current
(standby) TTL
E = VIH
53
mA
ICC2
Supply current
(standby) CMOS
E = VCC –0.2
3
2
mA
IBAT
Battery current OSC
ON
VCC = 0 V
575
800
575
800
nA
Battery current OSC
OFF
100
100
nA
VIL
Input low voltage
–0.3
0.8
–0.3
0.8
V
VIH
Input high voltage
2.2
VCC + 0.3
2.0
VCC + 0.3
V
VOL
Output low voltage
IOL = 2.1 mA
0.4
0.4
V
Output low voltage
(open drain)(4)
4.
For IRQ/FT & RST pins (open drain).
IOL = 10 mA
0.4
0.4
V
VOH
Output high voltage
IOH = –1.0 mA
2.4
2.4
V
VOHB
(5)
5.
Conditioned outputs (ECON - GCON) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage
currents will reduce battery life.
VOH battery backup
IOUT2 = –1.0 µA
2.0
3.6
2.0
3.6
V
IOUT1
(6)
6.
External SRAM must match TIMEKEEPER® supervisor chip VCC specification.
VOUT current (active)
VOUT1 > VCC –0.3
100
70
mA
IOUT2
VOUT current (battery
backup)
VOUT2 > VBAT –0.3
100
100
µA
VPFD
Power-fail deselect
voltage
4.1
4.35
4.5
2.7
2.9
3.0
V
VSO
Battery backup
switchover voltage
3.0
VPFD –
100 mV
V
VBAT
Battery voltage
3.0
3.0
V



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