STM8S207MB datasheet(66/103 Pages) STMICROELECTRONICS

66 / 103 page

Electrical characteristics

STM8S207xx, STM8S208xx

66/103

Doc ID 14733 Rev 12

10.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA. fHSE

High speed internal RC oscillator (HSI)

Figure 18.

Typical HSI frequency variation vs VDD at 4 temperatures

Table 33.

HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of HSI oscillator

Trimmed by the

CLK_HSITRIMR register

for given VDD and TA

conditions

-1.0(1)

Guaranteeed by design, not tested in production.

1.0

Accuracy of HSI oscillator

(factory calibrated)

VDD = 5 V, TA = 25 °C

-1.5

1.5

VDD = 5 V,

25 °C

≤ TA ≤ 85 °C

-2.2

2.2

2.95 V

≤ VDD ≤ 5.5 V,

-40 °C

≤ TA ≤ 125 °C

-3.0(2)

Data based on characterization results, not tested in production

3.0(2)

tsu(HSI)

HSI oscillator wakeup

time including calibration

1.0(1)

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(2)

µA

-3%

-2%

-1%

2.5

3.5

4.5

5.5

-40˚C

25˚C

85˚C

125˚C

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