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STM8S207MB 数据表(PDF) 101 Page - STMicroelectronics

部件名 STM8S207MB
功能描述  Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash
PDF  103 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8S207MB 数据表(HTML) 101 Page - STMicroelectronics

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STM8S207xx, STM8S208xx
Revision history
Doc ID 14733 Rev 12
101/103
10-Jul-2009
8
cont’d
Section 10: Electrical characteristics: Added data for TBD values;
updated Table 15: Voltage characteristics and Table 18: General
operating conditions; updated VCAP specifications in Table 18 and in
Section 10.3.1: VCAP external capacitor; updated Figure 18;
replaced Figure 19; updated Table 35: RAM and hardware registers;
updated Figure 22 and Figure 35; added Figure 40: Typical
application with I2C bus and timing diagram.
Removed Table 56: Junction temperature range.
Added link between ordering information Figure 49 and STM8S20xx
features Table 2.
13-Apr-2010
9
Document status changed from “preliminary data” to “datasheet”.
Table 2: STM8S20xxx performance line features: high sink I/O for
STM8S207C8 is 16 (not 13).
Table 3: Peripheral clock gating bit assignments in CLK_PCKENR1/2
registers: updated bit positions for TIM2 and TIM3.
Figure 5: LQFP 48-pin pinout: added CAN_TX and CAN_RX to pins
35 and 36; noted that these pins are available only in STM8S208xx
devices.
Figure 7: LQFP 32-pin pinout: replaced uart2 with uart3.
Table 6: Pin description: added footnotes concerning beCAN
availability and UART1_RX and UART3_RX pins.
Table 13: Option byte description: added description of STM8L
bootloader option bytes to the option byte description table.
Added Section 9: Unique ID (and listed this attribute in Features).
Section 10.3: Operating conditions: added introductory text.
Table 18: General operating conditions: replaced “CEXT” with “VCAP”
and added data for ESR and ESL; removed “low power dissipation”
condition for TA.
Table 26: Total current consumption in halt mode at VDD = 5 V:
replaced max value of IDD(H) at 85 °C from 30 µA to 35 µA for the
condition “Flash in powerdown mode, HSI clock after wakeup”.
Table 33: HSI oscillator characteristics: updated the ACCHSI factory
calibrated values.
Functional EMS (electromagnetic susceptibility) and Table 47:
replaced “IEC 1000” with “IEC 61000”.
Electromagnetic interference (EMI) and Table 48: replaced “SAE
J1752/3” with “IEC 61967-2”.
Table 57: Thermal characteristics: changed the thermal resistance
junction-ambient value of LQFP32 (7x7 mm) from 59 °C/W to 60
°C/W.
Table 58.
Document revision history (continued)
Date
Revision
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