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M24LR64E-R 数据表(PDF) 120 Page - STMicroelectronics |
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M24LR64E-R 数据表(HTML) 120 Page - STMicroelectronics |
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120 / 140 page ![]() Maximum rating M24LR64E-R 120/140 Doc ID 022712 Rev 3 27 Maximum rating Stressing the device above the rating listed in Table 118 may cause permanent damage to the device. These are stress ratings only and operation of the device, at these or any other conditions above those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 118. Absolute maximum ratings Symbol Parameter Min. Max. Unit TA Ambient operating temperature –40 85 °C TSTG, hSTG, tSTG Storage conditions Sawn wafer on UV tape 15 25 °C 6(1) 1. Counted from ST shipment date. months kept in its original packing form TSTG Storage temperature UFDFPN8 (MLP8), SO8, TSSOP8 –65 150 °C TLEAD Lead temperature during soldering UFDFPN8 (MLP8), SO8, TSSOP8 see note (2) 2. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. °C VIO I2C input or output range –0.50 6.5 V VCC I2C supply voltage –0.50 6.5 V IOL_MAX DC output current on pin SDA or RF WIP/BUSY (when equal to 0) 5mA ICC (3) 3. Based on characterization, not tested in production. RF supply current AC0 - AC1 50 mA VMAX_1 (3) RF input voltage amplitude peak to peak between AC0 and AC1, GND pad left floating VAC0-VAC1 27 V VMAX_2 (3) AC voltage between AC0 and GND, or AC1 and GND VAC0-GND, or VAC1-GND -1 11 V VESD Electrostatic discharge voltage (human body model)(4) 4. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω) AC0, AC1 1000 V Other pads 3500 Electrostatic discharge voltage (Machine model) 400 |
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