DA6502.008

29 November 2012

2 (20)

BLOCK DIAGRAM

Figure 1. MAS6502 block diagram

ABSOLUTE MAXIMUM RATINGS

All Voltages with Respect to Ground

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

5.0

V

Voltage Range for All Pins

-0.3

V

Latchup Current Limit

For all pins, test according to

JESD78A.

-100

+100

mA

Junction Temperature

+ 150

°C

Storage Temperature

Note 1

- 55

+125

°C

Note 1. See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming

and calibration data retention time.

Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum

operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions

for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute

maximum ratings may be destructive to the devices.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

2.0

2.35

3.6

V

Supply Voltage at EEPROM

Programming

T=+25°C. Note 1.

3.0

3.3

3.6

V

Operating Temperature

-40

+25

+85

°C

The device performance may deteriorate in the long run if the Recommended Operation Conditions limits are continuously exceeded.

Note 1. It is recommended to program the EEPROM at room temperature.

R2

R4

R1

R3

ADC

PI

NI

COMMON

VDD

P

T

P

T

P

T

T

GND

VDD

CONTROL

VREFN

VREFP

TEST

I

OSC

EEPROM

SDA

SCL

TE3

EOC

XCLR

TE1

TE2

MAS6502