DA6502.008

29 November 2012

5 (20)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Temperature

Measurement Resistors

-19%

13900

30600

30600

+19%

Ω

Rsensor = 5 kΩ

Rsensor = 4.5 kΩ

Rsensor = 4 kΩ

Rsensor = 3.4 kΩ

-19%

8900

9400

9900

10500

+19%

Ω

Temperature

Coefficient of

Temperature

Measurement Resistors

-180

ppm / °C

EEPROM size

Note 1.

256

bit

EEPROM data write

time

Note 2.

16

ms

EEPROM data erase

time

Note 3.

8

ms

EEPROM data retention

TA = +85 °C

TA = +125 °C

10

24

1

years

Note 1. 8 bits out of 256 bits are reserved for internal oscillator trimming. The remaining 248 bits can be freely used for storing

calibration coefficients and other data.

Note 2. There should be at least a 16ms delay after each EEPROM write since EEPROM programming can take up to 16ms.

Note 3. There should be at least a 8ms delay after each EEPROM erase since EEPROM erasing can take up to 8ms.

Digital inputs

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Input High Voltage

80%

VDD

100%

VDD

V

Input Low Voltage

0%

VDD

20%

VDD

V

Serial Bus Clock

Frequency

400

kHz

XCLR Reset Pulse

Length

XCLR low pulse

200

ns

XCLR Pin Pull Up

Current

XCLR=0V

-1

-8

-80

µA

Digital outputs

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Output high voltage

80%

VDD

100%

VDD

V

Output low voltage

0%

VDD

20%

VDD

V

Signal rise time

(from 10% to 90%)

14

550

ns

Signal fall time

(from 90% to 10%)

11

11

ns