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ADP5063ACPZ-1-R7 数据表(PDF) 36 Page - Analog Devices

部件名 ADP5063ACPZ-1-R7
功能描述  Linear LiFePO4 Battery Charger with Power Path and USB Compatibility in LFCSP
PDF  44 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5063ACPZ-1-R7 数据表(HTML) 36 Page - Analog Devices

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ADP5063
Data Sheet
Rev. 0 | Page 36 of 44
APPLICATIONS INFORMATION
EXTERNAL COMPONENTS
ISO_Sx (VOUT) Capacitor Selection
To obtain stable operation of the ADP5063 in a safe way, the
combined effective capacitance of the ISO_Sx capacitor and
the system capacitance must not be less than 10 µF and must
not exceed 100 µF at any point during operation.
When choosing the capacitor value, it is also important to account
for the loss of capacitance caused by the output voltage dc bias.
Ceramic capacitors are manufactured with a variety of dielectrics,
each with a different behavior over temperature and applied
voltage. Capacitors must have a dielectric that is adequate to
ensure the minimum capacitance over the necessary temperature
range and dc bias conditions. X5R or X7R dielectrics with a
voltage rating of 6.3 V or higher are recommended for best
performance. Y5V and Z5U dielectrics are not recommended
for use with any dc-to-dc converter because of their poor
temperature and dc bias characteristics.
The worst-case capacitance, accounting for capacitor variation
over temperature, component tolerance, and voltage, is calcu-
lated using the following equation:
CEFF = COUT × (1 − TEMPCO) × (1 − TOL)
where:
CEFF is the effective capacitance at the operating voltage.
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
In this example, the worst-case temperature coefficient (TEMPCO)
over the range of −40°C to +85°C is assumed to be 15% for an
X5R dielectric. The tolerance of the capacitor (TOL) is assumed
to be 10%, and COUT is 16 μF at 4.2 V, as shown in Figure 35.
Figure 35. Murata GRM31CR61A226KE19 Capacitance vs. Bias Voltage
Substituting these values in the equation yields
CEFF = 16 μF × (1 − 0.15) × (1 − 0.1) ≈ 12.24 μF
To guarantee the performance of the charger in various operating
modes, including trickle charge, constant current charge, and
constant voltage charge, it is imperative that the effects of dc
bias, temperature, and tolerances on the behavior of the capaci-
tors be evaluated for each application.
Splitting ISO_Sx Capacitance
In many applications, the total ISO_Sx capacitance consists of a
number of capacitors. The system voltage node (ISO_Sx) usually
supplies a single regulator or a number of ICs and regulators,
each of which requires a capacitor close to its power supply
input (see Figure 36).
The capacitance close to the ADP5063 ISO_Sx output must be
at least 5 µF, as long as the total effective capacitance is at least
10 µF at any point during operation.
Figure 36. Splitting ISO_Sx Capacitance
ISO_Bx and ISO_Sx Capacitor Selection
The ISO_Bx and the ISO_Sx effective capacitance (including
temperature and dc bias effects) must not be less than 10 µF at
any point during operation. Typically, a nominal capacitance of
22 µF is required to fullfill the condition at all points of operation.
Suggestions for ISO_Bx and ISO_Sx capacitors are listed in
Table 34.
CBP Capacitor Selection
The internal supply voltage of the ADP5063 is equipped with a
noise suppressing capacitor at the CBP terminal. Do not allow CBP
capacitance to exceed 140 nF at any point during operation. Do
not connect any external voltage source, any resistive load, or
any other current load to the CBP terminal. Suggestions for a
CBP capacitor are listed in Table 35.
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
DC BIAS VOLTAGE (V)
ADP5063
IC1
IC2
ISO_Sx
VIN1
VIN2
CIN2
CISO_Sx > 5µF
CISO_Bx
≥10µF
SUM OF EFFECTIVE
CAPACITANCES
ON ISO_Sx NODE > 10µF
+
CIN1



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