| 数据搜索系统,热门电子元器件搜索 |
|
ADP5063ACPZ-1-R7 数据表(PDF) 39 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
ADP5063ACPZ-1-R7 数据表(HTML) 39 Page - Analog Devices |
|
39 / 44 page ![]() Data Sheet ADP5063 Rev. 0 | Page 39 of 44 POWER DISSIPATION AND THERMAL CONSIDERATIONS CHARGER POWER DISSIPATION When the ADP5063 charger operates at high ambient tempera- tures and at maximum current charging and loading conditions, the junction temperature can reach the maximum allowable operating limit of 125°C. When the junction temperature exceeds 140°C, the ADP5063 turns off, allowing the device to cool down. When the die temperature falls below 110°C and the TSD 140°C fault bit in Register 0x0D is cleared by an I2C write, the ADP5063 resumes normal operation. This section provides guidelines to calculate the power dissipated in the device to ensure that the ADP5063 operates below the maximum allowable junction temperature. To determine the available power dissipation in different operating modes under various operating conditions, use Equation 1 through Equation 4: PD = PLDOFET + PISOFET (1) where: PLDOFET is the power dissipated in the input LDO FET. PISOFET is the power dissipated in the battery isolation FET. Calculate the power dissipation in the LDO FET and the battery isolation FET using Equation 2 and Equation 3. PLDOFET = (VIN – VISO_Sx) × (ICHG + ILOAD) (2) PISOFET = (VISO_Sx – VISO_Bx) × ICHG (3) where: VIN is the input voltage at the VINx pins. VISO_Sx is the system voltage at the ISO_Sx pins. ICHG is the battery charge current. ILOAD is the system load current from the ISO_Sx pins. VISO_Bx is the battery voltage at the ISO_Bx pins. LDO Mode The system regulation voltage is user-programmable from 4.3 V to 5.0 V. In LDO mode (charging disabled, EN_CHG = low), calculation of the total power dissipation is simplified, assuming that all current is drawn from the VINx pins and the battery is not shared with ISO_Sx. PD = (VIN – VISO_Sx) × ILOAD Charging Mode In charging mode, the voltage at the ISO_Sx pins depends on the battery level. When the battery voltage is lower than VISO_SFC (typically 3.4 V), the voltage drop over the battery isolation FET is higher and the power dissipation must be calculated using Equation 3. When the battery voltage level reaches VISO_SFC, the power dissipation can be calculated using Equation 4. PISOFET = RDSON_ISO × ICHG (4) where: RDSON_ISO is the on resistance of the battery isolation FET (typically 110 mΩ during charging). ICHG is the battery charge current. The thermal control loop of the ADP5063 automatically limits the charge current to maintain a die temperature below TLIM (typically 115°C). The most intuitive and practical way to calculate the power dissipation in the ADP5063 device is to measure the power dissipated at the input and all of the outputs. Perform the measurements at the worst-case conditions (voltages, currents, and temperature). The difference between input and output power is the power that is dissipated in the device. JUNCTION TEMPERATURE In cases where the board temperature, TA, is known, the thermal resistance parameter, θJA, can be used to estimate the junction temperature rise. TJ is calculated from TA and PD using the formula TJ = TA + (PD × θJA) (5) The typical θJA value for the 20-lead LFCSP is 35.6°C/W (see Table 5). A very important factor to consider is that θJA is based on a 4-layer, 4 in × 3 in, 2.5 oz. copper board as per JEDEC standard, and real-world applications may use different sizes and layers. It is important to maximize the copper to remove the heat from the device. Copper exposed to air dissipates heat better than copper used in the inner layers. If the case temperature can be measured, the junction temperature is calculated by TJ = TC + (PD × θJC) (6) where TC is the case temperature and θJC is the junction-to-case thermal resistance provided in Table 5. The reliable operation of the charger can be achieved only if the estimated die junction temperature of the ADP5063 (Equation 5) is less than 125°C. Reliability and mean time between failures (MTBF) are greatly affected by increasing the junction temperature. Additional information about product reliability can be found in the ADI Reliability Handbook located at the following URL: http://www.analog.com/reliability_handbook. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |