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ADP5063ACPZ-1-R7 数据表(PDF) 39 Page - Analog Devices

部件名 ADP5063ACPZ-1-R7
功能描述  Linear LiFePO4 Battery Charger with Power Path and USB Compatibility in LFCSP
PDF  44 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5063ACPZ-1-R7 数据表(HTML) 39 Page - Analog Devices

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Data Sheet
ADP5063
Rev. 0 | Page 39 of 44
POWER DISSIPATION AND THERMAL CONSIDERATIONS
CHARGER POWER DISSIPATION
When the ADP5063 charger operates at high ambient tempera-
tures and at maximum current charging and loading conditions,
the junction temperature can reach the maximum allowable
operating limit of 125°C.
When the junction temperature exceeds 140°C, the ADP5063 turns
off, allowing the device to cool down. When the die temperature
falls below 110°C and the TSD 140°C fault bit in Register 0x0D
is cleared by an I2C write, the ADP5063 resumes normal operation.
This section provides guidelines to calculate the power dissipated
in the device to ensure that the ADP5063 operates below the
maximum allowable junction temperature.
To determine the available power dissipation in different
operating modes under various operating conditions, use
Equation 1 through Equation 4:
PD = PLDOFET + PISOFET
(1)
where:
PLDOFET is the power dissipated in the input LDO FET.
PISOFET is the power dissipated in the battery isolation FET.
Calculate the power dissipation in the LDO FET and the battery
isolation FET using Equation 2 and Equation 3.
PLDOFET = (VIN – VISO_Sx) × (ICHG + ILOAD)
(2)
PISOFET = (VISO_Sx – VISO_Bx) × ICHG
(3)
where:
VIN is the input voltage at the VINx pins.
VISO_Sx is the system voltage at the ISO_Sx pins.
ICHG is the battery charge current.
ILOAD is the system load current from the ISO_Sx pins.
VISO_Bx is the battery voltage at the ISO_Bx pins.
LDO Mode
The system regulation voltage is user-programmable from 4.3 V
to 5.0 V. In LDO mode (charging disabled, EN_CHG = low),
calculation of the total power dissipation is simplified, assuming
that all current is drawn from the VINx pins and the battery is
not shared with ISO_Sx.
PD = (VIN – VISO_Sx) × ILOAD
Charging Mode
In charging mode, the voltage at the ISO_Sx pins depends on
the battery level. When the battery voltage is lower than VISO_SFC
(typically 3.4 V), the voltage drop over the battery isolation FET
is higher and the power dissipation must be calculated using
Equation 3. When the battery voltage level reaches VISO_SFC, the
power dissipation can be calculated using Equation 4.
PISOFET = RDSON_ISO × ICHG
(4)
where:
RDSON_ISO is the on resistance of the battery isolation FET
(typically 110 mΩ during charging).
ICHG is the battery charge current.
The thermal control loop of the ADP5063 automatically limits
the charge current to maintain a die temperature below TLIM
(typically 115°C).
The most intuitive and practical way to calculate the power
dissipation in the ADP5063 device is to measure the power
dissipated at the input and all of the outputs. Perform the
measurements at the worst-case conditions (voltages, currents,
and temperature). The difference between input and output
power is the power that is dissipated in the device.
JUNCTION TEMPERATURE
In cases where the board temperature, TA, is known, the thermal
resistance parameter, θJA, can be used to estimate the junction
temperature rise. TJ is calculated from TA and PD using the formula
TJ = TA + (PD × θJA)
(5)
The typical θJA value for the 20-lead LFCSP is 35.6°C/W (see
Table 5). A very important factor to consider is that θJA is based
on a 4-layer, 4 in × 3 in, 2.5 oz. copper board as per JEDEC
standard, and real-world applications may use different sizes
and layers. It is important to maximize the copper to remove
the heat from the device. Copper exposed to air dissipates heat
better than copper used in the inner layers.
If the case temperature can be measured, the junction
temperature is calculated by
TJ = TC + (PD × θJC)
(6)
where TC is the case temperature and θJC is the junction-to-case
thermal resistance provided in Table 5.
The reliable operation of the charger can be achieved only if the
estimated die junction temperature of the ADP5063 (Equation 5)
is less than 125°C. Reliability and mean time between failures
(MTBF) are greatly affected by increasing the junction temperature.
Additional information about product reliability can be found
in the ADI Reliability Handbook located at the following URL:
http://www.analog.com/reliability_handbook.



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