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ADA4661-2ARMZ-R7 数据表(PDF) 28 Page - Analog Devices

部件名 ADA4661-2ARMZ-R7
功能描述  18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
PDF  32 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4661-2ARMZ-R7 数据表(HTML) 28 Page - Analog Devices

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ADA4661-2
Data Sheet
Rev. 0 | Page 28 of 32
NOISE CONSIDERATIONS WITH HIGH IMPEDANCE
SOURCES
Current noise from input terminals can become a dominant
contributor to the total circuit noise when an amplifier is driven
with a high impedance source. Unlike bipolar amplifiers,
CMOS amplifiers like the ADA4661-2 do not have an intrinsic
shot noise source at the input terminals. The small amount of
shot noise present is produced by the reverse saturation current
in the ESD protection diodes. This current noise is typically on
the order of 1 fA/√Hz to 10 fA/√Hz. Therefore, to measure
current noise in this range, a large source impedance of greater
than 10 GΩ is required.
For the ADA4661-2, the more relevant discussion centers
around an effect referred to as blowback noise. The blowback
effect comes from noise in the tail current source of the
amplifier, which is capacitively coupled to the amplifier inputs
through the gate-to-source capacitance (CGS) of the input
transistors. This blowback noise is multiplied by the source
impedance and appears as voltage noise at the input terminal. A
10× increase in the source impedance results in a 10× increase
in the voltage noise due to blowback.
The blowback noise spectrum has a high-pass response at low
frequencies due to CGS coupling. At high frequencies, the
spectrum tends to roll off with two poles: an internal pole due
to parasitic capacitances of the tail current source and an
external pole due to parasitic capacitances on the PCB.
Figure 89 shows the voltage noise density of the ADA4661-2
with source impedances of 1 MΩ and 10 MΩ. At low frequencies
(<1 Hz to 10 Hz), the amplifier 1/f voltage noise dominates the
spectrum. At moderate frequencies, the spectrum flattens due
to the thermal noise of the source resistors. As the frequency
increases, blowback noise dominates and causes the voltage
noise spectrum to increase. The noise spectrum continues to
increase until it reaches either the internal or external pole
frequency. After these poles, the spectrum starts to decrease.
Figure 89. Voltage Noise Density vs. Frequency (with Input Series Resistor RS)
Figure 90. Current Noise Density vs. Frequency
Figure 90 shows the current noise density of the ADA4661-2
with source impedances of 1 MΩ and 10 MΩ. This current
noise is extracted only from the voltage noise density curves in
the frequency band where blowback noise is the dominant
contributor. At low frequencies, the noise measurement is
dominated by resistor thermal noise and amplifier 1/f noise. At
high frequencies, parasitic capacitances dominate the source
impedance. The uncertainty of this scale factor prevents an
accurate current noise measurement for the entire frequency
range.
Blowback noise is present in all amplifiers. The magnitude of
the effect depends on the size of the input transistors and the
construction of the biasing circuitry. CMOS amplifiers typically
have more blowback noise than JFET amplifiers due to noisier
MOS transistor biasing. On the other hand, bipolar amplifiers
typically do not exhibit blowback noise because the large base
current shot noise masks any blowback noise present.
0.1
1
10
0.01
0.1
1
10
100
1k
10k
100k
FREQUENCY (Hz)
RS = 10MΩ
RS = 1MΩ
0.01
0.1
1
0.01
0.1
1
10
100
1k
10k
100k
FREQUENCY (Hz)
RS = 1MΩ
RS = 10MΩ
NOISE MEASUREMENT
LIMITATION
NOISE BANDWIDTH
LIMITATION



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