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ADA4661-2ARMZ-R7 数据表(PDF) 5 Page - Analog Devices

部件名 ADA4661-2ARMZ-R7
功能描述  18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
PDF  32 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4661-2ARMZ-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADA4661-2
Rev. 0 | Page 5 of 32
ELECTRICAL CHARACTERISTICS—10 V OPERATION
VSY = 10 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
30
150
µV
VCM = 1.5 V to 8.5 V
150
µV
VCM = 1.5 V to 8.5 V; −40°C ≤ TA ≤ +125°C
450
µV
VCM = 0 V to 10 V
300
µV
VCM = 0 V to 10 V; −40°C ≤ TA ≤ +125°C
600
µV
Offset Voltage Drift
ΔVOS/ΔT
−40°C ≤ TA ≤ +125°C
0.6
3.1
μV/°C
Input Bias Current
IB
0.25
15
pA
−40°C ≤ TA ≤ +85°C
80
pA
−40°C ≤ TA ≤ +125°C
750
pA
Input Offset Current
IOS
11
pA
−40°C ≤ TA ≤ +85°C
30
pA
−40°C ≤ TA ≤ +125°C
270
pA
Input Voltage Range
0
10
V
Common-Mode Rejection Ratio
CMRR
VCM = 1.5 V to 8.5 V
115
140
dB
VCM = 1.5 V to 8.5 V; −40°C ≤ TA ≤ +125°C
115
dB
VCM = 0 V to 10 V
95
114
dB
VCM = 0 V to 10 V; −40°C ≤ TA ≤ +125°C
86
dB
Large Signal Voltage Gain
AVO
RL = 100 kΩ, VOUT = 0.5 V to 9.5 V
120
145
dB
−40°C ≤ TA ≤ +125°C
120
dB
Input Resistance
Differential Mode
RINDM
>10
GΩ
Common Mode
RINCM
>10
GΩ
Input Capacitance
Differential Mode
CINDM
8.5
pF
Common Mode
CINCM
3
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 kΩ to VCM
9.96
9.98
V
−40°C ≤ TA ≤ +125°C
9.96
V
RL = 1 kΩ to VCM
9.7
9.88
V
−40°C ≤ TA ≤ +125°C
9.7
V
Output Voltage Low
VOL
RL = 10 kΩ to VCM
10
15
mV
−40°C ≤ TA ≤ +125°C
30
mV
RL = 1 kΩ to VCM
77
110
mV
−40°C ≤ TA ≤ +125°C
200
mV
Continuous Output Current
IOUT
Dropout voltage = 1 V
40
mA
Short-Circuit Current
ISC
Pulse width = 10 ms; refer to the Maximum
Power Dissipation section
±220
mA
Closed-Loop Output Impedance
ZOUT
f = 100 kHz, AV = 1
0.2
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = 3.0 V to 18 V
120
145
dB
−40°C ≤ TA ≤ +125°C
120
dB
Supply Current per Amplifier
ISY
IOUT = 0 mA
620
725
µA
−40°C ≤ TA ≤ +125°C
975
µA



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