STM32F207IE datasheet(115/163 Pages) STMICROELECTRONICS

115 / 163 page

STM32F205xx, STM32F207xx

Electrical characteristics

Doc ID 15818 Rev 7

115/163

INL(3)

Integral non linearity

(difference between

measured value at Code i

and the value at Code i on a

line drawn between Code 0

and last Code 1023)

±1

LSB

Given for the DAC in 10-bit

configuration.

±4

LSB

Given for the DAC in 12-bit

configuration.

Offset(3)

Offset error

(difference between

measured value at Code

(0x800) and the ideal value =

VREF+/2)

±10

Given for the DAC in 12-bit

configuration

±3

LSB

Given for the DAC in 10-bit at

VREF+ = 3.6 V

±12

LSB

Given for the DAC in 12-bit at

VREF+ = 3.6 V

Gain

error(3)

Gain error

±0.5

Given for the DAC in 12-bit

configuration

tSETTLING

(3)

Settling time (full scale: for a

10-bit input code transition

between the lowest and the

highest input codes when

DAC_OUT reaches final

value ±4LSB

-3

µs

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

THD(3)

Total Harmonic Distortion

Buffer ON

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

Update

rate(2)

Max frequency for a correct

DAC_OUT change when

small variation in the input

code (from code i to i+1LSB)

MS/s

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

tWAKEUP

(3)

Wakeup time from off state

(Setting the ENx bit in the

DAC Control register)

-6.5

µs

CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ

input code between lowest and

highest possible ones.

PSRR+ (2)

Power supply rejection ratio

(to VDDA) (static DC

measurement)

–67

–40

No RLOAD, CLOAD = 50 pF

If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced temperature range.

Guaranteed by design, not tested in production.

Guaranteed by characterization, not tested in production.

Table 63.

DAC characteristics (continued)

Symbol

Parameter

Min

Typ

Max

Unit

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