STM32F207IE datasheet(111/163 Pages) STMICROELECTRONICS

111 / 163 page

STM32F205xx, STM32F207xx

Electrical characteristics

Doc ID 15818 Rev 7

111/163

Note:

ADC accuracy vs. negative injection current: Injecting a negative current on any of the

standard (non-robust) analog input pins should be avoided as this significantly reduces the

accuracy of the conversion being performed on another analog input. It is recommended to

add a Schottky diode (pin to ground) to standard analog pins which may potentially inject

negative currents.

Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in

Section 5.3.16 does not affect the ADC accuracy.

Figure 49.

ADC accuracy characteristics

Example of an actual transfer curve.

Ideal transfer curve.

End point correlation line.

ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset Error: deviation between the first actual transition and the first ideal one.

EG = Gain Error: deviation between the last ideal transition and the last actual one.

ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.

EL = Integral Linearity Error: maximum deviation between any actual transition and the end point

correlation line.

Table 62.

ADC accuracy (1)

Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol

Parameter

Test conditions

Typ

Max(2)

Based on characterization, not tested in production.

Unit

Total unadjusted error

fPCLK2 = 60 MHz,

fADC = 30 MHz, RAIN < 10 kΩ,

VDDA = 1.8

(3) to 3.6 V

If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced

temperature range.

±2

±5

LSB

Offset error

±1.5

±2.5

Gain error

±1.5

±3

Differential linearity error

±1

±2

Integral linearity error

±1.5

±3

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