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AN2021 数据表(PDF) 11 Page - STMicroelectronics

部件名 AN2021
功能描述  The ST10F272B and ST10F272E are members of the STMicroelectronics
PDF  39 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2021 数据表(HTML) 11 Page - STMicroelectronics

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AN2021
Modified features
11/39
1.3.1
Hardware impact
None.
1.3.2
Software impact
As the first 32 Kbytes of Flash memory are now divided into four sectors of 8 Kbytes each in
the ST10F272 whereas the ST10F269 had only three sectors, the mapping of the
application is impacted.
Moreover, the Flash memory Write/Erase controller is different and therefore the
programming routines must be updated.
When the bit ROMEN of the SYSCON register is set, that is, when the internal Flash
memory is enabled, accesses to the address range 05’0000h - 07’FFFFh are not redirected
to external memory. The linker-locator configuration of the toolchain should be checked in
order to prevent any use of this memory range.
Table 3.
Flash memory mapping
Segment
ST10F269 Flash mapping
ST10F272 Flash mapping
8
08’0000-08’FFFF
External memory
08’0000-08’FFFF
Flash registers
7..5
05’0000-07’FFFF
External memory
05’0000-07’FFFF
Reserved
4
04’0000-04’FFFF
Block6: 64 Kbytes
04’0000-04’FFFF
Block7: 64 Kbytes
3
03’0000-03’FFFF
Block5: 64 Kbytes
03’0000-03’FFFF
Block6: 64 Kbytes
2
02’0000-02’FFFF
Block4: 64 Kbytes
02’0000-02’FFFF
Block5: 64 Kbytes
1
01’8000-01’FFFF
Block3: 32 Kbytes
01’8000-01’FFFF
Block4: 32 Kbytes
01’0000-01’7FFF
External memory or
remap of Blocks 0-2
01’0000-01’7FFF
External memory or
remap of Blocks 0-3
0
00’8000 - 00’FFFF
External memory
Internal RAM
and Registers
00’8000 - 00’FFFF
External memory
Internal RAM
and Registers
00’6000 - 00’7FFF
Block 2: 8 Kbytes
00’6000 - 00’7FFF
Block3: 8 Kbytes
00’4000 - 00’5FFF
Block 1: 8 Kbytes
00’4000 - 00’5FFF
Block2: 8 Kbytes
00’0000 - 00’3FFF
Block 0: 16 Kbytes
00’2000 - 00’3FFF
Block1: 8 Kbytes
00’0000 - 00’1FFF
Block0: 8 Kbytes



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