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A25LS512A 数据表(PDF) 16 Page - AMIC Technology |
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A25LS512A 数据表(HTML) 16 Page - AMIC Technology |
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16 / 43 page ![]() A25LS512A Series (November, 2014, Version 1.1) 15 AMIC Technology Corp. Read Data Bytes at Higher Speed (FAST_READ) The device is first selected by driving Chip Select ( S ) Low. The instruction code for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 9. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select ( S ) High. Chip Select ( S ) can be driven High at any time during data output. Any Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 9. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence Instruction High Impedance MSB 810 9 01 2 3 4 5 6 7 24-Bit Address 28 29 30 31 23 22 21 3 21 0 Data Out 1 Data Out 2 7 0 S C DIO DO S C DIO DO 32 33 34 35 36 37 38 39 65 4 1 7 3 40 41 42 43 44 45 46 47 20 Dummy Byte MSB 0 MSB 7 6 54 32 1 MSB 7 6 54 32 1 0 Note: Address bits A23 to A16 are Don’t Care, for A25LS512A. |
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