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A25LS512A 数据表(PDF) 33 Page - AMIC Technology |
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A25LS512A 数据表(HTML) 33 Page - AMIC Technology |
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33 / 43 page ![]() A25LS512A Series (November, 2014, Version 1.1) 32 AMIC Technology Corp. Table 15. AC Characteristics Symbol Alt. Parameter Min. Typ. Max. Unit fC fC Clock Frequency for the following instructions: FAST_READ, PP, SE, BE, DP, RES, RDID, WREN, WRDI, RDSR, WRSR (2.7V~3.6V) / (3.0V~3.6V) D.C. 80/100 MHz fR Clock Frequency for READ instructions D.C. 66 MHz tCH 1 tCLH Clock High Time 6 ns tCL 1 tCLL Clock Low Time 5 ns tCLCH 2 Clock Rise Time 3 (peak to peak) 0.1 V/ns tCHCL 2 Clock Fall Time 3 (peak to peak) 0.1 V/ns tSLCH tCSS S Active Setup Time (relative to C) 5 ns tCHSL S Not Active Hold Time (relative to C) 5 ns tDVCH tDSU Data In Setup Time 5 ns tCHDX tDH Data In Hold Time 5 ns tCHSH S Active Hold Time (relative to C) 5 ns tSHCH S Not Active Setup Time (relative to C) 5 ns tSHSL tCSH S Deselect Time 100 ns tSHQZ 2 tDIS Output Disable Time 9 ns tCLQV tV Clock Low to Output Valid 9 ns tCLQX tHO Output Hold Time 0 ns tHLCH HOLD Setup Time (relative to C) 5 ns tCHHH HOLD Hold Time (relative to C) 5 ns tHHCH HOLD Setup Time (relative to C) 5 ns tCHHL HOLD Hold Time (relative to C) 5 ns tHHQX 2 tLZ HOLD to Output Low-Z 8 ns tHLQZ 2 tHZ HOLD to Output High-Z 8 ns tWHSL 4 Write Protect Setup Time 20 ns tSHWL 4 Write Protect Hold Time 100 ns tDP 2 S High to Deep Power-down Mode 3 µs tRES1 2 S High to Standby Mode without Electronic Signature Read 30 µs tRES2 2 S High to Standby Mode with Electronic Signature Read 30 µs tW Write Status Register Cycle Time 5 15 ms tpp Page Program Cycle Time 2 3 ms tSE Sector Erase Cycle Time 0.2 0.24 s tBE Block Erase Cycle Time 0.5 1.3 s tCE Chip Erase Cycle Time of A25LS512A 0.5 1.3 s Note: 1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 3. Expressed as a slew-rate. 4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. |
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