VP310

PRELIMINARY DATA

27

4.3 Crystal specification

Parallel resonant fundamental frequency (preferred)

9.99 to 16.00MHz.

Tolerance over operating temperature range

± 25ppm.

Tolerance overall

± 50ppm.

Nominal load capacitance

30pF.

Equivalent series resistance

<35

Ω

33pF

33pF

XTI

XTO

GND

Figure 19. Crystal oscillator circuit.

NOTE: The crystal frequency should be chosen to ensure that the system clock would

marginally exceed the maximum symbol rate required.

4.4 DC electrical characteristics

Parameter

Conditions / Pin

Symbol

Min.

Typ.

Max.

Unit

Operating voltage

VDD

3.0

3.3

3.6

V

Average power supply current

IDD

TBD

mA

Average supply current Stand-by

Mode

TBD

µA

Output levels VOH

Tri-state push pull

1 mA drive current.

IIN, QIN, CLKOUT, MDO,

MOVAL, MOSTRT, MCLK,

BKERRB, DISECQ, STATUS

VOH

0.80VDD 0.92VDD

V

Output levels VOL

Tri-state push pull

1 mA drive current,

Pins as VOH.

VOL

0.2

0.4

V

Output level open drain

4 mA drive current.

6 mA drive current.

AGC, SDA, IRQB, GPP<2:0>

0.4

0.6

V

V

Open drain output max. voltage

5.5

V

Input levels VIH CMOS

3.3V input

VIH

0.8VDD

3.6

V

Input levels VIH CMOS

5.0V input

VIH

0.8VDD

5.5

V

Input levels VIL CMOS

VIL

0.2VDD

V

Input leakage Current

VIN = 0 and VDD

10

µA

Table 3. DC electrical characteristics.