STM32F479AI datasheet(127/208 Pages) STMICROELECTRONICS

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STM32F479xx

Electrical characteristics

187

Table 52. Flash memory endurance and data retention

5.3.17

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 53. They are based on the EMS levels and classes

defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Based on test during characterization.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

Table 53. EMS characteristics

Symbol

Parameter

Conditions

Level/Class

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD = 3.3 V, TFBGA216,

TA = +25 °C, fHCLK = 168 MHz,

conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, TFBGA216,

TA = +25 °C, fHCLK = 168 MHz,

conforming to IEC 61000-4-2

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