STM32F479AI datasheet(131/208 Pages) STMICROELECTRONICS

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STM32F479xx

Electrical characteristics

187

VHYS

FT, TTa and NRST I/O input

hysteresis

1.7 V≤VDD≤3.6 V

10%VDD(3)

BOOT0 I/O input hysteresis

1.75 V≤VDD ≤3.6 V, –

40 °C≤TA ≤105 °C

0.1

1.7 V≤VDD ≤3.6 V,

0°C≤TA ≤105 °C

Ilkg

I/O input leakage current (4)

VSS ≤VIN ≤VDD

±1

µA

I/O FT input leakage current (5)

VIN = 5 V

--3

RPU

Weak pull-up

equivalent

resistor(6)

All pins

except for

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

VIN = VSS

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

710

RPD

Weak pull-

down

equivalent

resistor(7)

All pins

except for

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

VIN = VDD

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

710

CIO(8)

I/O pin capacitance

1. Guaranteed by design.

2. Tested in production.

3. With a minimum of 200 mV.

4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 57

5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be

higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 57

6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the

series resistance is minimum (~10% order).

7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the

series resistance is minimum (~10% order).

Hysteresis voltage between Schmitt trigger switching levels. Based on test during characterization.

Table 58. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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