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STM32F479AI 数据表(PDF) 182 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 182 Page - STMicroelectronics |
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182 / 208 page ![]() Electrical characteristics STM32F479xx 182/208 DocID028010 Rev 2 Figure 72. Quad-SPI DDR timing diagram 5.3.31 Camera interface (DCMI) timing specifications Unless otherwise specified, the parameters given in Table 109 for DCMI are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 17, with the following configuration: • DCMI_PIXCLK polarity: falling • DCMI_VSYNC and DCMI_HSYNC polarity: high • Data formats: 14 bits • Capacitive load C = 30 pF • Measurement points are done at CMOS levels: 0.5 VDD Table 108. Quad-SPI characteristics in DDR mode(1) Symbol Parameter Test conditions Min Typ Max Unit Fck 1/t(CK) Quad-SPI clock frequency 2.7 V ≤ VDD ≤ 3.6 V, CL = 20 pF -- 80 MHz 1.71 V ≤ VDD ≤ 3.6 V, CL = 15 pF -- 70 tw(CKH) Quad-SPI clock high time ‐ t(CK)/2-1 - t(CK)/2 ns tw(CKL) Quad-SPI clock low time - t(CK)/2 - t(CK)/2+1 tsr(IN) tsf(IN) Data input set-up time 2.7 V ≤ VDD ≤ 3.6 V 2 - - 1.71 V ≤ VDD ≤ 3.6 V 0.5 - - thr(IN) thf(IN) Data input hold time 2.7 V ≤ VDD ≤ 3.6 V 3 - - 1.71 V ≤ VDD ≤ 3.6 V 4.5 - - tvr(OUT) tvf(OUT) Data output valid time DHHC=0 - 8 10.5 DHHC=1 Pres=1,2… -Thclk/2+2 Thclk/2+2.5 th(OUT) tf(OUT) Data output hold time DHHC=0 7 - - DHHC=1 Pres=1,2… Thclk/2+0.5 - - 1. Guaranteed based on test during characterization. |
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