ISL8117

9

FN8666.3

June 4, 2015

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PWM GATE DRIVER

Source Current

2000

mA

Sink Current

2000

mA

Upper Drive Pull-up

VCC5V = 5.0V

1.5

Ω

Upper Drive Pull-down

VCC5V = 5.0V

1.5

Ω

Lower Drive Pull-up

VCC5V = 5.0V

1.0

Ω

Lower Drive Pull-down

VCC5V = 5.0V

0.8

Ω

Upper Drive Rise Time

9.0

ns

Upper Drive Fall Time

8.0

ns

Lower Drive Rise Time

7.0

ns

Lower Drive Fall Time

6.1

ns

OVERVOLTAGE PROTECTION

OVP Threshold

116

121

127

%

OVERCURRENT PROTECTION

OC Set Current Source

LGATE/OCS = 0V

9

10.5

11.5

µA

OVER-TEMPERATURE

Over-temperature Shutdown

160

°C

Over-temperature Hysteresis

15

°C

NOTES:

6. In normal operation, where the device is supplied with voltage on the VIN pin, the VCC5V pin provides a 5V output capable of 75mA (min). When the

device is supplied by an external 5V supply on the EXTBIAS pin, the internal LDO regulator is disabled. The voltage at VCC5V should not exceed the

voltage at VIN at any time. (Refer to “Pin Descriptions” on page 3 for more details.)

8. Operating current is the supply current consumed when the device is active but not switching. It does not include gate drive current.

9. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization

and are not production tested.

10. Threshold voltage at PHASE pin for turning off the bottom MOSFET during DEM.

unless otherwise specified. Boldface limits apply across the operating temperature range, -40°C to +125°C. (Continued)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

MAX