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SWCS049B 数据表(PDF) 40 Page - Texas Instruments |
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SWCS049B 数据表(HTML) 40 Page - Texas Instruments |
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40 / 119 page  SWCS049-008 VCC7 VIO INT1 1.8 V NRESPWRON Switch On sequence Interrupt acknowledge PWRHOLD VMBHI_IT=1 CLK32KOUT VMBCH threshold VMBHI threshold VRTC 1.8 V VMBDCH2 threshold VMBLO threshold VBNPR threshold Switch-off sequence VBACKUP > VBNPR tdbVMBLO tdbVMBDCH td32KON tdbVMBHI tdSONT tdONPWHOLD 40 TPS659110, TPS659112, TPS659113 TPS659114, TPS659118, TPS6591133 SWCS049Q – JUNE 2010 – REVISED MARCH 2016 www.ti.com Submit Documentation Feedback Product Folder Links: TPS659110 TPS659112 TPS659113 TPS659114 TPS659118 TPS6591133 Specifications Copyright © 2010–2016, Texas Instruments Incorporated 5.23.2.3 Device Turnon and Turnoff With Rising and Falling Input Voltage A. To allow power-up from first supply insertion as shown here, VMBHI_IT_MSK is set to 0. B. Power-up to active state is enabled when VMBHI interrupt is not masked (VMBHI_IT_MSK in boot configuration). C. DEV_ON or AUTODEV_ON control bits can be used instead of PWRHOLD signal to maintain supplies on after switch-on sequence. Figure 5-5. Device Turnon and Turnoff With Rising and Falling Input Voltage Table 5-4. Device Turnon Voltage With Rising Input Voltage, Timing Characteristics PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td32KON 32-kHz oscillator turnon time RC oscillator 0.1 ms Quartz oscillator 200 Bypass clock 0.1 tdbVMBHI VMBHI rising-edge debouncing delay 3 × tCK32k = 94 4 × tCK32k = 125 µs tdOINT1 INT1 power on pulse duration after VMBHI high level (debounced) event 1 s tdONPWHOLD Delay to set high PWRHOLD signal or DEV_ON control bit after NRESPWRON released in order to keep on the supplies tdOINT1 – tDSONT = 970 ms tdbVMBDCH Main battery voltage = VMBDCH threshold to INT1 falling-edge delay 3 × tCK32k = 94 4 × tCK32k = 125 s tdbVMBLO Main battery voltage = VMBLO threshold to NRESPWRON falling-edge delay 3 × tCK32k = 94 4 × tCK32k = 125 s |
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