AP0101CS datasheet(35/42 Pages) ONSEMI

35 / 42 page

AP0101CS/D Rev. 7, 1/16 EN

©Semiconductor Components Industries, LLC,2016.

AP0101CS HDR: Image Signal Processor (ISP)

Electrical Specifications

Caution

Stresses greater than those listed in Table 18 may cause permanent damage to the device.

This is a stress rating only, and functional operation of the device at these or any other con-

ditions above those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliabil-

ity.

Table 18:

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Min

Max

VDD_REG

Digital power (1.8V)

-0.3

4.95

VDDIO_H

Host I/O power (2.5V,3.3V)

2.25

5.4

VDDIO_S

Sensor I/O power (1.8V, 2.8V)

1.7

5.4

VDD

Digital core power

1.1

2.5

VDD_PLL

PLL power

1.1

2.5

VDDIO_OTPM

OTPM power

2.25

5.4

VIN

DC Input Voltage

-0.3

VDDIO_*+0.3

VOUT

DC Output Voltage

-0.3

VDDIO_*+0.3

TSTG

Storage temperature

-50

150

°C

Table 19:

Electrical Characteristics and Operating Conditions

Parameter

Condition

Min

Typ

Max

Unit

Supply input to on-chip regulator (VDD_REG)

1.62

1.8

1.98

Host IO voltage (VDDIO_H)

2.25

2.5/3.3

3.6

Sensor IO voltage (VDDIO_S)

1.7

1.8/2.8

3.1

Core voltage (VDD)

1.08

1.2

1.32

PLL voltage (VDD_PLL)

1.08

1.2

1.32

OTPM power supply (VDDIO_OTPM)

2.25

2.5/3.3

3.6

Functional operating temperature (ambient - TA)

-30

°C

Storage temperature

-55

150

°C

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