STM8AL3136 datasheet(69/124 Pages) STMICROELECTRONICS

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STM8AL313x/4x/6x STM8AL3L4x/6x

Electrical parameters

108

Figure 14. Typ. IDD(Wait) vs. VDD, fCPU = 16 MHz 1)

1. Typical current consumption measured with code executed from Flash memory

Table 23. Total current consumption and timing in low-power run mode at VDD =1.65 V to 3.6 V

Symbol

Parameter

Conditions(1)

Typ

Max

Unit

IDD(LPR)

Supply current

in Low power

run mode

LSI RC osc.

(at 38 kHz)

all peripherals

OFF

TA = -40 °C to 25 °C

5.10

5.40(2)

μA

TA = 85 °C

6.80

11(3)

TA = 125 °C

13.40

20(3)

LSE (4) external

clock

(32.768 kHz)

all peripherals

OFF

TA = -40 °C to 25 °C

5.25

5.60(2)

TA = 85 °C

5.85

6.30(2)

TA = 125 °C

9.85

12.00(2)

1. No floating I/Os.

2. Data based on characterization results, not tested in production.

3. Tested at 85°C for temperature range A or 125°C for temperature range C.

4. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 33.

Table 24. Total current consumption in low-power wait mode at VDD = 1.65 V to 3.6 V

Symbol

Parameter

Conditions(1)

Typ

Max

Unit

IDD(LPW)

Supply current

Low power wait

mode

LSI RC osc.

(at 38 kHz)

all peripherals

OFF

TA = -40 °C to 25 °C

3.00

3.30(2)

μA

TA = 85 °C

4.40

9(3)

TA = 125 °C

11.00

18(3)

LSE external

clock(4)

(32.768 kHz)

all peripherals

OFF

TA = -40 °C to 25 °C

2.35

2.70(2)

TA = 85 °C

3.10

3.70(2)

TA = 125 °C

7.20

11.00(2)

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