数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STM8AL3136 数据表(PDF) 80 Page - STMicroelectronics

部件名 STM8AL3136
功能描述  Automotive 8-bit ultra-low-power MCU, up to 32 Kbyte Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs
PDF  124 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AL3136 数据表(HTML) 80 Page - STMicroelectronics

Back Button STM8AL3136 Datasheet HTML 76Page - STMicroelectronics STM8AL3136 Datasheet HTML 77Page - STMicroelectronics STM8AL3136 Datasheet HTML 78Page - STMicroelectronics STM8AL3136 Datasheet HTML 79Page - STMicroelectronics STM8AL3136 Datasheet HTML 80Page - STMicroelectronics STM8AL3136 Datasheet HTML 81Page - STMicroelectronics STM8AL3136 Datasheet HTML 82Page - STMicroelectronics STM8AL3136 Datasheet HTML 83Page - STMicroelectronics STM8AL3136 Datasheet HTML 84Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 80 / 124 page
background image
Electrical parameters
STM8AL313x/4x/6x STM8AL3L4x/6x
80/124
DocID18474 Rev 7
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Flash memory
Table 36. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
Halt mode (or Reset)
1.65
-
-
V
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in
Halt mode). Guaranteed by characterization, not tested in production.
Table 37. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
-
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
--
6
-
ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
--
3
-
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
-
0.7
-
mA
TA=+25 °C, VDD = 1.8 V
-
-
Table 38. Flash program memory
Symbol
Parameter
Conditions
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
125
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
TA = 25 °C
1000
-
cycles
tRET
Data retention time
TA = 25 °C
40
-
years
TA = 55 °C
20
-
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a write/erase
operation addresses a single byte.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com