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STM8AF6213 数据表(PDF) 71 Page - STMicroelectronics

部件名 STM8AF6213
功能描述  Automotive 8-bit MCU, with up to 8 Kbyte Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, IC, 3 to 5.5 V
PDF  106 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AF6213 数据表(HTML) 71 Page - STMicroelectronics

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DocID025118 Rev 5
71/106
STM8AF6213/23/23A/26
Electrical characteristics
103
Table 45. Flash program memory
Symbol
Parameter
Condition
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
150
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a
write/erase operation addresses a single byte.
TA = 25 °C
1000
-
cycles
tRET
Data retention time
TA = 25 °C
40
-
years
TA = 55 °C
20
-
Table 46. Data memory
Symbol
Parameter
Condition
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
150
°C
NWE
Data memory endurance(1)
(erase/write cycles)
1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a
write/erase operation addresses a single byte.
TA = 25 °C
300 k
-
cycles
TA = -40°C to 125 °C
100 k(2)
2. More information on the relationship between data retention time and number of write/erase cycles is
available in a separate technical document.
-
tRET
Data retention time
TA = 25 °C
40(3)
3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.
-
years
TA = 55 °C
20(2)(3)
-



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