| 数据搜索系统,热门电子元器件搜索 |
|
STM8AF6213 数据表(PDF) 71 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM8AF6213 数据表(HTML) 71 Page - STMicroelectronics |
|
71 / 106 page ![]() DocID025118 Rev 5 71/106 STM8AF6213/23/23A/26 Electrical characteristics 103 Table 45. Flash program memory Symbol Parameter Condition Min Max Unit TWE Temperature for writing and erasing - -40 150 °C NWE Flash program memory endurance (erase/write cycles)(1) 1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a write/erase operation addresses a single byte. TA = 25 °C 1000 - cycles tRET Data retention time TA = 25 °C 40 - years TA = 55 °C 20 - Table 46. Data memory Symbol Parameter Condition Min Max Unit TWE Temperature for writing and erasing - -40 150 °C NWE Data memory endurance(1) (erase/write cycles) 1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a write/erase operation addresses a single byte. TA = 25 °C 300 k - cycles TA = -40°C to 125 °C 100 k(2) 2. More information on the relationship between data retention time and number of write/erase cycles is available in a separate technical document. - tRET Data retention time TA = 25 °C 40(3) 3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C. - years TA = 55 °C 20(2)(3) - |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |